A 1MHz, 93.7% Peak Efficiency, Heterogenous GaN/BCD 48-to-3.3V~5V DC-DC Buck Converter

In this paper, a step-down converter chip with high conversion efficiency is designed based on silicon-based gallium nitride heterogeneous integration technology. Among them, the GaN HEMT uses EPC2036 FET bare die, the control circuit adopts the TSMC 0.25um BCD process for research and design, and the pulse width modulation and voltage mode control are used to design the overall system. The simulation results show that the switching frequency of the buck converter is 1MHz, the input voltage is 48V, the output voltage is 3.3V~5V, the output power is 3.6W at full load, and the maximum conversion efficiency is 93.7^% when the output voltage is 5V. The chip design technology is suitable for miniaturized vehicle power converter and other applications.