Memorable Logic Gate Based on Field Effect Oxide Resistive Switching Devices

Today's on-chip computing power is hindered by the “memory wall”, “power wall” and Von Neumann bottleneck. As one promising solution, a field effect (FE) oxide resistive switching memory device (RRAM) based memorable logic gates have been developed in this work. Based on the fabricated three terminal RRAM, the polynomial control source (PCS) based compact circuit model is proposed to describe the devices' behavior. The FE-RRAM could be regarded as a non-volatile transmission gate. In addition, a memorable logic gates with an input storage function has been designed using only 2 FE-RRAMs. It shows that the memorable logic gates have great potential in the applications of computing-in-memory.