Displacement Damage Effects on a CDTI-Based CCD-on-CMOS: Dark Current and Charge Transfer Inefficiency

Displacement damage effects induced by proton and neutron irradiation are explored in a capacitive deep trench charge coupled device (CCD)-on-CMOS image sensor. Dark current and charge transfer inefficiency (CTI) are investigated to exhibit, respectively, the generation and capture-emission mechanisms arising with defect clusters and point defects introduction. This article reports the trends in damage factor, trap production rate, trap cross section, and energy distribution with respect to particle fluence and annealing. CTI mitigation techniques based on the temperature and clocking of operation are discussed.