A dual-band power amplifier with simultaneously controllable bandwidth

In this paper, a dual-band impedance matching method is proposed and applied to the design of dual-band power amplifier. The proposed impedance matching network can control the bandwidth of two operating bands simultaneously through network parameters, achieving an asymmetric controllable bandwidth with one wide and one narrow. Additionally, harmonic control is added to the output matching network to enhance the performance of the power amplifier. For demonstration, a dual-band power amplifier was designed and manufactured using the CREE CGH40010F gallium nitride high electron mobility transistor(GaN HEMT). The measurement results show that the drain efficiency of the power amplifier at 2.0 GHz and 3.3 GHz reaches 69.7% and 73.5% respectively, the gain exceeds 10.5 dB for both frequency bands and the output power is greater than 40 dBm. This verifies the design of a low band range with 400 MHz bandwidth and a high band range with 100 MHz bandwidth.