An 18-to-39 GHz SPDT Switch with AC-floating Technology Achieving < 2.0-dB Insertion Loss

This letter presents an 18-to-39 GHz low-insertion-loss single-pole double-throw (SPDT) switch. Adopted triple-well NMOS transistors, the proposed switch utilizes low-loss Π-network and AC-floating technology to improve the insertion loss. Fabricated in 0.13-μm SiGe BiCMOS, the proposed switch achieves an insertion loss of less than 2.0 dB and an isolation of better than 16.5 dB in the frequency range of 18-39 GHz. The measured input 1 dB compression point of the proposed switch is 11.7 dBm, and the chip-core area of the proposed SPDT switch is 0.138 mm².