A D-Band 28-nm CMOS Differential Low-Noise Amplifier with Transformer-Based Broadband Matching Network Applied for 6G Receiver

This letter presents a 118-170 GHz low-noise amplifier (LNA) fabricated in 28-nm bulk CMOS applied for high-speed 6G receiver. The broadband high gain of the 5-stage common-source(CS) LNA is achieved by transformer-based matching network with common-mode suppression. The sensible connection of compact transistor layout is utilized to reduce parasitic effect and noise figure. More than 19.3 dB gain with a peak of 25.3 dB at 130 GHz can be presented and the simulated minimum noise figure (NF) can reach 6.8 dB. The IP1dB of -23 dBm and the consumption of 47.7 mW are achieved, which occupies an area of 0.49×0.81 mm² with pads.