Enhancement of Device Uniformity in IWO TFTs via RF Magnetron Co-Sputtering of In2O3 and WO3 Targets

In this letter, the cause of the poor uniformity in indium tungsten oxide (IWO) thin-film transistors (TFTs) is investigated. The significant fluctuation in tungsten (W) content, which results from the non-uniformity of the IWO target, is responsible. To solve this problem, RF magnetron co-sputtering of In2O3 and WO3 targets is adopted to eliminate the variation of W content, thereby achieving high-uniformity IWO TFTs with enhanced performance. This co-sputtering methodology could shed light on the pathways for mitigating the device uniformity challenges encountered in mass production settings, thus leading to substantial cost reductions.