GaxIn1-xAsyP1-y/InP terraced substrate single-mode laser

An index-guiding structure capable of providing well-controlled single-mode operation has been realized for Ga
x
In
1-x
AS
y
P
1-y
/InP lasers (
x = 0.28, y = 0.62
, and
\lambda = 1.3 \mu
m) using a terraced substrate (TS) configuration prepared by single-step LPE growth. The threshold current was reduced to as low as 44 mA and single-transverse and longitudinal mode operation was stably achieved up to 2.8 times the threshold. Continuous operation at room temperature was also demonstrated.