Characterization of In0.53Ga0.47As photodiodes exhibiting low dark current and low junction capacitance

The preparation and properties of grown p-n homojunction In
0.53
Ga
0.47
As photodiodes for operation in the
1-1.7 \mu
m wavelength range are described. At a reverse bias of 20 V, these diodes exhibit generation-recombination limited dark current as low as
2 \times 10^{-9}
A, junction capacitance of 0.3 pF, and pulse response corresponding to a circuit-limited rise time of 60 ps and diffusion-limited full width (FWHM) of 140 ps.