New InGaAs/InP avalanche photodiode structure for the 1-1.6 µm wavelength region

Low dark current and low multiplication noise properties for an In
0.53
Ga
0.47
As/InP avalanche photodiode are described. The diode is prepared with an In
0.53
Ga
0.47
As light absorption layer and an InP avalanche multiplication region. The lowest dark current density of
5.2 \times 10^{-4}
A/cm
²
is obtained at 90 percent of a breakdown voltage. Multiplication noise power is proportional to the 2.7th power of the current multiplication factor. Impact ionization coefficient by holes is larger by 2-3 times than that by electrons in