Cage-in-Cage test setup for discontinuous radiated emissions from GaN transistors in the gigahertz frequency range

The article presents a method for measuring unwanted radio frequency emissions in the frequency range 30 MHz to (at least) 6 GHz coming from new types of transistors based on gallium nitride (GaN). A test set-up based on dedicated Faraday cage was designed to extract emissions passing only through the transistor housing. Secondary screening was achieved through the use of an anechoic chamber and fast broadband spectrum measurement was performed using a real-time EMI receiver.