A 9-10 GHz High-Efficiency GaN HEMT High Power Amplifier MMIC

This paper presents a 9-10 GHz high-efficiency, and high-gain three-stage high power amplifier (HPA) monolithic microwave integrated circuit (MMIC) based on 0.25-µm gallium nitride (GaN) high-electron mobility transistor (HEMT) process. The input and output impedances of the MMIC are both designed to match 50 ohms. Post EM simulation results show that this MMIC achieves a gain of more than 30 dB over the operating bandwidth, saturated output power Pout better than 30 W, and a drain efficiency greater than 50%. The HPA MMIC layout measures 5 mm × 5 mm.