Hetero-Integrated InP RTD-SiGe BiCMOS Source With Fundamental Injection Locking

This work shows the hetero-integration of an InP resonant tunneling diode (RTD) on a SiGe-BiCMOS mm-Wave integrated circuit (MMIC) for near-field wireless fundamental injection locking. We observe injection locking within a locking range of 26 GHz and a total power during injection locking of −3.4 dBm. The SiGe-based local oscillator (LO) is integrated with a frequency doubler and an on-chip patch antenna that operates between 220 and 247 GHz, providing a maximum output power of −7 dBm. The LO is near-field coupled to an InP RTD oscillator integrated into a slot antenna which reaches a free running maximum output power of −6.2 dBm. The chip-to-chip integration is carried out through flip-chip bonding.