Improvement Heat Dissipation of Flip Chip Double-Sided cooling IGBT Module Using AlSiC-Interposer Technology

As the power density of electric vehicles continues to increase, double-sided cooling technology has emerged as a focal point of research. However, the complexity of double-sided cooling structures leads to significant thermal mismatch issues, potentially resulting in the failure of interconnect among components. The hotspot in interposers further exacerbates the risk of thermal failure in attach layers. This paper proposes using AlSiC interposers to enhance the heat dissipation and power density handling capability of the module. Additionally, we designed and manufactured 750-V/300-A 1-in-1 flip chip double-sided cooling (FCDSC) insulated gate bipolar transistor (IGBT) power module with AlSiC interposers. Thermal and thermomechanical stress simulation results showed that, at a total power loss of 180 W, the maximum junction temperature of the module with AlSiC interposers is reduced by 4.4% compared to the conventional Mo interposer module, and the maximum thermal stress in the attach layers is slightly decreased. The thermal resistance of the module with AlSiC interposers is 12.8% lower than that of the module with Mo interposers. Furthermore, it was proved by the power cycling tests (PCT) that the lifetime of the FCDSC power module using AlSiC interposers is 25% longer than that with Mo interposers and at least two times longer than that with Cu interposers under the same
T_jmax
and Δ
T
Static electrical tests demonstrate that the power module with AlSiC interposers exhibit no degradation.