Characteristics of RF injection locking of self-pulsing in an AlGaAs DH junction laser

The minimum RF power required for injection locking of the light pulsations in the output of a CW room-temperature AlGaAs double-heterostructure (DH) junction laser was found to depend exponentially on (
f-f_{r}
), where
f
is the RF injection frequency and f
r
is the self-pulsing frequency, and also, to depend inversely on the self-pulsing strength of the laser. Nearly 100-percent modulation depth is achievable at
f=f_{r}
, and slight reduction of modulation depth occurs when
f \gg f_{r}
.