Threshold behavior of CW GaAs-AlGaAs injection lasers

This paper investigates some of the properties of continuous wave (CW) (AlGa)As-GaAs injection lasers with Al in the active region. The active region gain at threshold
g
th is estimated as a function of Al concentration in the active region. The basic configuration is a five-layer structure with GaAs as the two outer regions; the center region is Al
y
Ga
1-y
As and the two surrounding layers are Al
x
Ga
1-x
As .