Monolithic Ga1-xInxAs diode lasers

Monolithic homojunction diode lasers have been fabricated from vapor-grown Ga
1-x
In
x
As (
0 \leq x \geq 0.06
) mesa structures with grown optical facets. The Ga
1-x
In
x
As lasers have been operated at 77 K, and similar GaAs mesa devices have lased between 77 K and 300 K. Monolithic arrays of up to six mesa lasers on a single substrate have been operated with all lasers oscillating simultaneously.