A Novel T-Shape Channel With an Inverted-T Nano-Cavity Label-Free Detection Using Si:HfO2 Ferroelectric DGDM-JLTFET as a Biosensor—A Simulation Study

In this article, we present and simulate a very sensitive label-free biosensor that uses Si:HfO2 ferroelectric (FE) junction less tunnel field-effect transistor (FE-JL-TFET) charge/dielectric modulation. For the first time negative capacitance (NC) behavior is made possible by the FE gate stacking of Si-doped HfO2 in the dual inverted-T cavity with T-shaped channel is used in the biosensor design. Using a sacrificial etching approach, two cavities are formed in the gate-source underlap areas to detect biomolecules such as lipid ( ${K}= {3}$ ), carbohydrates ( ${K} =5$ ), plant protein zein ( ${K} = 7$ ), amino acids ( ${K} =12$ ), and MDA-MB-231 (breast cancer cell, ${K} = 22$ ). For both charged and neutral biomolecules, the biosensor has shown increased sensitivity. The biomolecules that are neutrally, positively, and negatively charged have maximal values of the ${I} _{\text {on}}$ / ${I} _{\text {off}}$ ratio that reach as high as $4.65\times 10^{{10}}$ , $6.24\times 10^{{10}}$ , and $9.47\times 10^{{10}}$ , respectively. It has been noted that the proposed device sensing performance can be greatly enhanced by optimizing the cavity height and length. For neutral, negative, and positive charged biomolecules, the proposed biosensor sensitivity has been greatly increased to $8.61\times 10^{{4}}$ , $7.93\times 10^{{3}}$ , and $1.05\times 10^{{5}}$ , respectively. It has shown better sensitivity when compared with other advanced biosensors.