Kr-Plasma Process for Conductance Control of MFSFET With FeND-HfO₂ Gate Insulator

In this work, we have investigated the conductance control of the metal-ferroelectrics-Si field-effect transistor (MFSFET) utilizing 5 nm thick ferroelectric nondoped $\rm HfO_{2}$ (FeND-HfO2) gate insulator. The Kr-plasma process is effective to decrease the plasma damage compared to the Ar-plasma process during the in-situ deposition of FeND-HfO2 and Pt gate electrode by RF-magnetron sputtering. The precise control such as less than 20 mV was realized which led to the conductance control for 10 states from 0 to $0.6~\mu $ S/ $\mu $ m both for potentiation and depression operations with the input pulses of $\mathbf {\pm 3}$ V/100 ns.