Single-Input Dual-Output Digital Gate Driver IC Automatically Equalizing Drain Current Variations of Two Parallel-Connected SiC MOSFETs

A single-input, dual-output (SIDO) digital gate driver (DGD) IC is proposed, to solve the device characteristic variation problem and the parasitic inductance variation problem on PCBs in two parallel-connected SiC MOSFETs. This paper is the first in the world to achieve all of (1) fully integrated two sensor output processing circuits, two DGDs and a controller required to detect and equalize the drain current variation of two parallel-connected SiC MOSFETs on a gate driver IC, (2) equalization of DC and surge components of drain current of each MOSFET in a closed loop, and (3) demonstration measurements of drain current equalization under a total of four conditions, with and without SiC MOSFET characteristic variations and with and without parasitic inductance variations.