Study of the frame architecture on the photodetection of the self-driven SnTe:Si/Si heterostructure

Photodetectors have a wide range of potential applications in infrared imaging, optical communication, and remote sensing. The architecture of the photodetectors plays an important role in their photodetection performances. Herein, taking the SnTe:Si/Si diode type photodetector as an example, we reported that Ga
₂
O
₃
frame architecture is highly effective in the improvement of photodetection. Three kinds of wide bandgap semiconductors (Ga
₂
O
₃
, Si
₃
N
₄
and AlN) were utilized as the frame to construct SnTe:Si/Si heterostructure photodetectors. It is found that frame architecture can reduce the dark current of SnTe:Si/Si heterojunction and different frame materials greatly influenced the dark current and photocurrent of SnTe:Si/Si heterostructure. Notably, the devices with Ga
₂
O
₃
frame exhibits superior performance, and it showcases a responsivity (R) of 3176 mA/W and a record-high specific detectivity (D*) of 2.21×10
¹⁴
Jones under 850 nm illumination, which are 10 times and 70 times higher than those of the device without any frame architecture. Therefore, the frame architecture is highly effective in the enhancement of R and D* and may be applicable to all the diode type photodetectors.