A Physics-Based Analytic Model for p-GaN HEMTs

This article introduces a physics-based framework for modeling drain current in p-GaN gate high electron mobility transistors (p-GaN HEMTs). The model is constructed on fundamental electrostatic equations and adopts a self-consistent approach to solve the Schrödinger-Poisson equations, while using 2-D density of states (2D-DOSs) and Fermi-Dirac (FD) statistics for carriers. Drift-diffusion formalism is integrated into the model to simulate carrier flow within the device, and the model’s accuracy is validated against experimentally measured data for p-GaN HEMTs. The model, by virtue of its physics-based foundation, is further tested to provide insights into various behavioral nuances and characteristics of the devices and, as such, presents an avenue to supplement time-consuming TCAD simulations, facilitating the development of e-mode pGaN devices.