CR-DRAM: Improving DRAM Refresh Energy Efficiency With Inter-Subarray Charge Recycling

A dynamic random access memory (DRAM) relies on periodic refresh operations to prevent data loss caused by charge leakage. As memory capacities continue to grow, refresh power consumption accounts for an increasing proportion of the total DRAM power, and in some contexts, it even becomes a major contributor to power consumption. To address this issue, previous research has explored the tradeoff between DRAM reliability and refresh overhead. However, DRAM reliability degrades as technology nodes advance, making these approaches inapplicable in scenarios, such as servers, where high data reliability is critical. Furthermore, these approaches require modifications to the standard DRAM interface protocol and memory controller (MC), rendering them infeasible for standalone use in computer systems. In this article, we propose an energy-efficient charge-recycling DRAM (CR-DRAM), which enables multiple rounds of charge (i.e., energy) recycling between subarrays within a single autorefresh (AR) process. After refreshing a row, CR-DRAM reuses the charge stored in the bitline (BL) capacitors to supply power for refreshing the next row in another subarray, rather than discharging them directly. Since CR-DRAM is compatible with the joint electron device engineering council (JEDEC) interface standard, it can be easily integrated into modern computer systems. Our circuit-level simulation shows that CR-DRAM significantly reduces AR power consumption by 33.9% compared with conventional DRAM, with a modest area overhead of less than 0.9%. Furthermore, our system-level evaluation shows that CR-DRAM offers an average energy savings of 9.2% (maximum of 11.9%) compared with 8-Gb double data rate 4 (DDR4) DRAM across SPEC-2006 benchmark workloads.