$\text{MoS}_{2}/\text{Si}$ Heterojunction Device Stacked Utilizing an All-Transfer-Printing Method

The all-transfer-printing processes are utilized to realize photodetectors composed of $\text{MoS}_{2}/\text{Si}$ heterojunction. Compared to traditional photolithography process, this proposed method can avoid photoresist residue and organic solvent. As a result, the photoresponsivity increases ∼ 30 times.