Work Function Analysis of Vertical Tunnel FET for Inverter Applications

In this article, the current work delves into the characteristics of a unique type of tunnel field effect transistor (TFET) device, specifically a VTFET (vertical tunnel field effect transistor) and the soon to be introduced unique vertical Tunnel FE T (VTFE T), which is a fascinating device. Almost every aspect of modern technology has been impacted by nanomaterials and devices in the miniaturization age. Dielectric material and interfaces to lower the subthreshold leakage current are necessary for the suggested device to be acceptable for low power applications. Using the SILV ACO TCAD tool, the device's verified for effective results with values of 38.85 mv/decade sub threshold slope, for a channel length 30-nm with a 6-nm Ge-Si layer, it is presented by the high value of on current $(\mathbf{I}_{\mathbf{ON}} =\mathbf{2.3}\times \mathbf{10}^{-\mathbf{7}}\mathbf{A}/\boldsymbol{\mu}\mathbf{m})$, low value of off current $(\mathbf{I}_{\mathbf{OFF}}= \mathbf{1.4}\times \mathbf{10}^{-\mathbf{18}}\mathbf{A}/\boldsymbol{\mu} \mathbf{m})$, and $\mathbf{10}^{\mathbf{11}}$ ratio of current $(\mathbf{I}_{\mathbf{ON}}/\mathbf{I}_{\mathbf{OFF}})$ according to this order respectively. Because of the low I-off current and Subthreshold slope or swing (S), the current work focuses on low power digital circuit applications of the novel vertical TFET, which works upon a different principle than the standard lateral TFET (LTFET).