Analysis of a low-dropout voltage regulator designed using omega-gate nanowire transistors experimental data

In this work, the low-dropout voltage regulator (LDO) was designed using omega-gate nanowire transistors. These transistors were modeled using the Verilog-A description based on the experimental data. After the model validation LDO’s were developed using gm/I
D
strategy considering transconductance over drain current ratio (gm/I
D
) of 7V
⁻¹
and 8V
⁻¹
with load capacitances of 10pf and 100pf. The LDO was designed to provide a voltage of 1.5V and 100μA at the output. The LDO biased transistors with gm/I
D
equal to 8V
⁻¹
presented very good results where the Loop Voltage Gain was 52.2dB, the gain bandwidth product (GBW) was 5.9MHz for load of 10pf, the load regulation was 27V/A and power supply rejection (PSR) was 41dB showing that Omega-gate nanowire transistors can be a good option for LDOs circuits.