Impact of Ionizing Radiation on the Behavior of Pseudo-Resistors with Temperature-Dependent Analysis

Microelectronics has made significant progress in recent decades. As a result of these advances, various devices derived from MOSFETs have emerged, including the pseudo-resistor. This device is an MOS transistor with a specific connection between its terminals. As such, it behaves like a MOS transistor for a specific voltage range, like a bipolar transistor in another range, and like a resistor in a narrow range of tens of millivolts. When another MOS transistor is placed in a “back-to-back” configuration with the first, symmetrical behavior is achieved across the full voltage range. In this work, the behavior of the pseudo-resistor was analyzed concerning its operating temperature variation and exposure to ionizing radiation, evaluating the phenomenon of total ionizing dose (TID). It was found that the device exhibits different resistance values at different temperatures. For exposure to ionizing radiation such as X-rays, its equivalent resistance did not vary significantly, regardless of the total accumulated dose. Even after the irradiation ended, the resistance dependence remained constant.