Influence of disorder on the structural analysis of a quantum Bragg mirror detector

This study investigates the growth quality of a far-infrared asymmetric quantum Bragg mirror detector (QBMD) based on GaAs/Al
0.15
Ga
0.85
As. The sample, grown by molecular beam epitaxy (MBE), was characterized by high-resolution x-ray diffraction (HRXRD) to assess the impact of structural disorder on the QBMD’s final performance. The experimental results were compared with simulated x-ray diffraction spectra, highlighting the excellent quality of the QBMD growth despite fluctuations up to two monolayers in the thickness of the quantum wells and barriers of the active region.