Electrical Channel Length in the Subthreshold Operation of Junctionless Nanowire Transistors

In this work, the electrical length of Junctionless Nanowire Transistors biased in the subthreshold condition is analyzed. An analytical model for the lateral depletion regions is proposed and validated using numerical simulations. A method for extracting the effective channel length based on the occurrence of short-channel effects is also presented, validated with the simulations, and applied to experimental devices.