Enhancement of the optoelectronic characteristics of deep ultraviolet LED by the n+-AlGaN tunnel junction

It is well known that the internal quantum efficiency (IQE) of deep ultraviolet (DUV) light emitting diodes (LEDs) is lower and the efficiency droops seriously, which can be partly attributed to the low carrier injection efficiency. An n
⁺
-AIGaN tunnel junction (TJ) LED is proposed in this paper. Compared to the traditional structure, the IQE of LED with n
⁺
-AIGaN TJ has been increased by $38.1 \%$ and the output power has been increased by $168.7 \%$. It’s worth mentioning that the efficiency of the LED with n
⁺
-AIGaN TJ droops by only 3.94%. The energy band of the device can be manipulated by the LEDs with n
⁺
-AlGaN TJ, which results in an increase in carrier concentration.