Study on simulation model and reliabilities of microwave SiC capacitors

In this paper, simplified equivalent circuit and simulation model of microwave SiC capacitors are presented. Based on different size capacitors, the S parameters are obtained. By compared with simulation model and actual device parameters, the accuracy of the simulation model is optimized. The ultimate breakdown voltage of capacitor is 528V. After reliability experiments, such as High-and-low temperature performance, high temperature storage, temperature cycle and electric aging, the leakage current has no change. The capacitors show excellent performances and reliabilities under extreme conditions, which can match microwave applications with high voltage.