A Wideband Low-Noise Amplifier for 5G and Satellite Communication

This paper presents an 18.5-32.5 GHz low-noise amplifier (LNA) in 0.1-μm Gallium Nitride (GaN) process for 5G base station applications. Transmission lines are introduced between decoupling capacitors to increase the isolation of RF choke. A parallel RC network is used in the last stage to improve wideband output return loss. The proposed LNA shows a peak gain of 23.2 dB with a 3-dB bandwidth from 18.5 to 32.5 GHz. The in-band noise figure (NF) is 0.65-0.9 dB. The input return loss and output return loss are both better than 10 dB. The LNA consumes 290mW and occupies a compact chip area of 2.2 ×1.3 mm².