A Ku-Band Broadband High-Efficiency GaAs MMIC Power Amplifier

This work uses $0.25-\mu \mathrm{m}$ GaAs pHEMT technology to design a 11.7-17.6 GHz broadband high-efficiency monolithic microwave integrated circuit (MMIC) amplifier. An equivalent impedance model matching technology is used to improve the bandwidth of the power amplifiers (PAs). Compared with the traditional single impedance point matching method, our design can obtain a more accurate impedance transformation trajectory, thereby ensuring broadband matching. The simulation results show that when the drain voltage is 5 V, the power-added efficiency (PAE) of the amplifier in the 11.7-17.6 GHz is greater than 34.6%, the peak P AE reaches 38.8%, and the output power (Pout) is greater than 31 dBm (1.3 W), while providing a gain greater than 20 dB. The designed P A stands out with its wide bandwidth and high P AE.