Design of 2 to 17GHz GaN Ultra-Wideband MMIC Power Amplifier

In this paper, a $2\sim 17$ GHz ultra-wideband gallium nitride $(\text{GaN})$ power amplifier is designed using monolithic microwave integrated circuit (MMIC) technology, which employs a non-uniformly distributed structure to improve gain flatness and efficiency consistency within the frequency band. In addition, a gate capacitance compensation technique is designed to reduce the loss caused by input mismatch and improve the output power. The power amplifier is designed based on $0.15\mu \text{mGaN}$ high electron mobility transistors (HEMT) process environment, and the electromagnetic simulation results show that the output power is maintained at 5.8-7.5 W in the frequency band range, and the in-band PAE is greater than 24% and up to 32.5%.