A C-Band GaN High-Efficiency Power Amplifier with Input Harmonic Control

A C-band power amplifier is designed using GaN HEMT transistor CGH40035F. In order to improve the efficiency, input harmonic control technique is adopted in the design. To achieve greater output power, the drain bias voltage is increased. Under the input power of 37 dBm, the output power is above 47.0 dBm, and the drain efficiency is above 61.2% between 5.7 to 5.9 GHz.