Design of X-band Low Noise Amplifier Using GaAs Technology

In this paper, a low-noise amplifier (LNA) microwave monolithic integrated circuit (MMIC) with amplitude limiting function is demonstrated, which is implemented using GaAs technology. The limiting unit of this circuit uses a PIN diode design, and the low-noise amplifier unit uses a two-stage cascode structure composed of GaAs-pHEMT. The frequency band used by the limiting low-noise amplifier is the X-band and the insertion loss in the entire frequency band is less than 1 dB. The noise figure is less than 1.7dB and the gain is greater than 20 dB. It shows excellent performance and has broad application prospects.