A GeTe Phase-change RF Switch Design Based on Microstrip Line Structure

In this paper, an RF switch based on GeTe thermotropic phase transition is designed. In order to reduce the parasitic capacitance present in this switch, the switch adopts a microstrip line as the transmission line structure and a three-dimensional heated structure in the design. After simulation and comparison, the insertion loss of the new structure is less than 0.12 dB in the frequency band of 1-70 GHz. In the design of single-pole-double-throw switches, the size of the switches designed in this paper can be reduced to 300um*300um, and the insertion loss is less than 0.7 dB.