RF Performance Evaluation of AlGaN/GaN 140 nm T-gate HEMTs at High Temperatures

This manuscript presents our recent findings from small signal RF measurements of AlGaN/GaN high-electron-mobility transistors (HEMTs) at different temperatures. We will discuss the temperature-dependent variations of key RF device performance parameters, including extrinsic cutoff frequency
$(f_{T})$
, maximum gain frequency
$(f_{max}$
), unilateral power gain (UPG), and maximum stable gain (MSG).