Noise Analysis of Memristors: Single Device and Crossbar array

An extensive amount of research on noise has been conducted regarding traditional passive and active electronic devices. Being new passive electronic devices, memristors still lack systematic noise analysis and measurements in the literature. In this paper, we propose the measurement of the signal-to-noise ratio, the noise figure, the noise power spectral density in both a memristor as a single device and in a memristor-based crossbar structure, and the bandwidth. The results show that memristor devices' behavior under the influence of noise can be analyzed by relying on some strong existing assumptions based on linear circuits where the memristor device is treated instantaneously as a linear resistor, a voltage-driven memristor device is modeled as a voltage source in series with a noiseless resistor
$\mathrm{R}$
with uniform white power spectral density, and the root mean square voltage of the noise is equivalent to the standard deviation of the zero-mean Gaussian PDF governing the thermal noise. This experiment paves the way for in-depth memristor noise investigations that could lead to the derivation of a generalized noise model tailor-made for memristor devices.