A novel thermal interface materials based on porous metal copper filled tin for die attachment in power device packaging

As electronic devices continue to develop towards higher integration and miniaturization, the power density also increases, which in turn leads to a significant rise in the amount of heat generated by the devices. Therefore, efficiently dissipating more heat and maintaining the system at lower temperature levels has become a bottleneck issue for power devices. Porous copper, with its advantages of high thermal conductivity, high specific heat capacity, and low manufacturing costs, has a wide range of potential applications for power device packaging. Nevertheless, existing reports have primarily concentrated on the preparation of porous metal copper materials, lacking research on their interconnection techniques and long-term reliability. This paper used orthogonal experiments to study the effect of metal porous copper filled tin. Under the optimal process parameters (250 °C, 8 MPa, 10 min), the shear strength of the interconnection structure is 36.3 MPa. After 500 h of high-temperature storage, the shear strength of the interconnect structure reached 44.3 MPa, whichwas 122
^%
of the initial shear strength. In addition, the thermal conductivity of the interconnect structure after 500 hours of high-temperature storage was 206.7 W·m
⁻¹
K
⁻¹
, which was 71.3% of the initial thermal conductivity. In other words, during long-term service, the mechanical and thermal properties of porous copper were excellent, making it suitable for interconnects in power devices.