High Resolution 1024×768 Micro-LED Display Using Flip-Chip Bonding

Micro-light-emitting diode (Micro-LED) displays are self-emitting display that integrate III- V compound semiconductors onto silicon (Si) complementary metal-oxide-semiconductor (CMOS) backplane. These displays offer several advantages, including high brightness, low energy consumption, high contrast, long life, and robustness against harsh environment. In this article, micro-LED panels featuring a 1024×768 pixel array within an active area of 0.6 inch were fabricated by bonding the GaN micro-LED array onto the active matrix of a CMOS driver backplane. Optoelectronic testing of the blue micro-LED array reveals peak external quantum efficiency (EQE) of 28.8% and wall-plug efficiency (WPE) ranging from 24.5% to 26.6% at a driving current of 300 mA. The micro-LED panels exhibit excellent image quality, characterized by high brightness, high contrast, and uniform emitting, indicating high quality of the flip-chip bonding process and the overall fabrication process.