Degradation Evaluation of Neutron Irradiation Effect on AlGaN/GaN Metal-Insulator- Semiconductor High Electron Mobility Transistors

We investigate the degradation effects of neutron irradiation on AIGaN/GaN metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) in this work. The performance of the devices is characterized through relevant electrical current-voltage (I-V) test and capacitance- voltage (C-V) test. The result indicates that the electrical parameter of the device degrades after neutron irradiation, such as positive shift of threshold voltage, reduction in output drain current, and the increase of the on-resistance. Additionally, combining with the frequency-dependent conductance method, it displays that shallow energy level- interface states at the AIGaN/GaN heterojunction increase, along with slightly shifting to deeper energy level after neutron irradiation. Neutron irradiation introduces more interface states and increase the scattering which degrading the carrier concentration and mobility, causing related degradation on electrical performances. This study provides useful reference value for the application of GaN-based devices in the aerospace.