Design of a High-power Density Power Module with Large-area (10 mm × 10 mm) SiC MOSFETs for Traction Inverter Application

In this paper, the design of a high-power density power module using large-area SiC MOSFETs (10 mm × 10 mm) is presented. The performance of the proposed flip-chip double-side cooling power module is compared to a traditional double-side cooling power module in both thermal and electrical characteristics. In comparison to multiple regularsized chips, the large-area chips allow higher current output on a single chip, which offer a more flexible layout and lower thermal resistance in double-side cooling (DSC) module. Additionally, there is no current imbalance problem in a single chip module. The results indicate that power circuit parasitic inductance of the proposed module is 5.36 nH, which is 29.07% lower than the one based on regular-sized (5 mm × 5 mm) power devices. By using flip-chip technology instead of bonding wire, the parasitic inductance of the signal loop is reduced to 3.61 nH, representing a 36.88% decrease compared to the wire-bonding module. Moreover, the thermal resistance of the proposed module is 0.232 K/W, which is 12.9% lower.