Low Dk/Df Thermosetting Siloxane Hybrid Material for Advanced Packaging Substrate

Advanced packaging is an indispensable technology for high performance semiconductor devices with high-speed data transmission to realize the hyper-connected society such as internet of things (IoTs), artificial intelligence (AI), and metaverse. To achieve high speed data transfer from the device to device without any error, utilizing material of low dielectric constant (Dk) and low dissipation factor (Df) at high frequency range for advanced packaging substrate has been considered as a key factor. Recently, many low Dk/Df materials have been proposed, for example, modified polyimide (MPI), epoxy, polyphenylene ether (PPE) and polybenzoxazole (PBO). However, the dielectric properties and stability in humid condition of above materials are significantly improper for high-speed applications. Here, we present thermosetting siloxane hybrid materials (Singi G™-1 and 2) with low Dk/Df value in high frequency ranges with high dielectric stability in harsh humid condition. Thermally cured Singi G™-1 and 2 represents low Dk/Df value of 2.9/0.0016 and 3.0/0.0018 respectively at 10 GHz with no variation after aging in harsh humid condition (85
^∘
C /100 RH%). We also fabricated Singi G™-1 and 2 prepreg with glass fabric of quartz and NE-glass. The Singi G™-1 prepreg with quartz and NE-glass fabric showed Dk/Df value of 3.2/0.0014 and 3.43/0.0022 at 10 GHz respectively, whereas the Singi G™-2 prepreg with NE-glass fabric showed Dk/Df value of 3.48/0.0024. Finally, we demonstrated microstrip TEST coupon with Singi G™-1 and its prepreg (quartz) as substrate to evaluate the transmission characteristics. The fabricated Singi G™-1 and quartz prepreg based microstrip showed transmission loss (S
21
) of -1.77dB/100mm and -1.41dB/100mm at 10 GHz respectively, which were low enough to be utilized as advanced packaging substrate for high-speed data transmission.