Improving Thermal Transport at Graphene Film/Silver Interfaces by Titanium

To meet the escalating demands for thermal management driven by the rapid increase in power density and compact packaging structures, reducing the thermal resistances of non-metallic/metallic heterogeneous structures is very important for thermal management in electronic packaging. In this work, transition metal (titanium) was used to reduce the thermal resistances between graphene film (GF) and silver (Ag). The deposition of titanium between GF and Ag using the physical vapor deposition (PVD) method, creates a buffer layer between GF and substrate metal. The advantage of the buffer layer is that it can regulate the electron-phonon transfer between GF and metal, resulting a lower interfacial thermal resistance. The influence of transition metal Ti on the interfacial thermal resistance between GF and Ag was investigated, and it was found that the introduction of Ti can decrease the interfacial thermal resistance between GF and Ag by 23%. Our methods can achieve a lower interfacial thermal resistance between GF and Ag. The results offer an effective thermal management solution for electronic packaging.