Effect of the Off State/Half-On State/On State Electrical Stresses on the Reliability of Packaged D-Mode GaN/AlGaN HEMTs

In this study, different typical electrical stresses (ES) were applied to the depletion mode GaN/AlGaN high electron mobility transistors (HEMTs) to simulate the application scenarios in real production and life. By applying three kinds of typical electrical stress, we observed the device static obvious changes in the electrical parameters are as follows: (1) Compared with the original device, the threshold voltage VTH of the device has obvious left drift, and the transconductance and Rds,on decrease under the Off State electrical stress; (2) Under the Half-On State/On State electrical stress, the threshold voltage of the device is positively skewed, the on-resistance Rds,on increases, and the saturation leakage current Idsat decreases significantly. The experiments reveal the dependence of threshold voltage (VTH), peak transconductance (Gmmax) and saturation leakage current (Idsat) on different stress modes, which provides an intentional reference for the quality and reliability of subsequent GaN/AlGaN HEMTs practical production applications.