Multi-Physics Coupling Simulation of Picosecond Pulsed Laser Ablation of Single-Crystal Silicon

Single-crystal silicon is currently the most widely used wafer substrate material, and the use of silicon materials in the world accounts for more than 95% of the total semicon-ductor materials. In order to separate the chip from the wafer, laser grooving is used before the blade dicing. Through simulation research, the laser grooving process can be visualized, so as to obtain the dynamic physical field information that is difficult to be measured in the experiment can be obtained, and the laser grooving mechanism can be deeply understood to provide support for experimental research. In this paper, a simulation study of picosecond pulsed laser ablation of single-crystal silicon under multi-physics coupling was carried out by COMSOL. The results show that the ablation threshold of single-crystal silicon by picosecond pulse laser is 162.87mJ/cm2 under one pulse. The incubation effect of laser ablation of single-crystal silicon under multi-pulse effect was found, and a power law model was established. The evolution of temperature field during laser ablation of single-crystal silicon was investigated, and the evolution mechanism of groove morphology was elucidated.