Finite Element Analysis of the Effect of Process Variables and Defects on the Reliability of Nanosilver Processes

RF devices can operate at high power densities, which generates a large thermal concentration, thus affecting device reliability. Sintered silver has excellent performance and is an effective method to solve this problem. However, low-temperature pressureless nanosilver sintering can be defective in process fabrication. In this study, actual sample defects and discrepancies were counted based on the occurrence of voids due to dispensing defects, tilting due to manufacturing, and thickness differences due to process variations so that simulation models could be built and analyzed. The results show that larger voids, caused by dispensing defects, increase thermal resistance and decrease sample lifespan. Tilting does not notably increase thermal resistance. Defects tend to form on the thinner, inclined side. Choosing an appropriate nanosilver thickness without increasing thermal resistance significantly boosts the reliability of the device. According to response surface analysis, thickness is crucial in affecting reliability in this specific process variation.