A Promising Silicon-Based Fan-Out Heterogeneous Integration Technology for V-Band InP Transceiver Chiplet Package

This paper introduces a V-band InP transceiver chip-let based on silicon-based Fan-out heterogeneous integration process, which adopts independent silicon-based embedded heterogeneous integration process. The chip-let, as shown in Fig 1, which integrated with six frequency multiplier, mixer, filter, amplifier and pseudo-code modulator, etc. and adopts BGA interface, has the characteristics of high integration, low loss and low power consumption. The chip works at 58 GHz ~ 62 GHz, with a receiving conversion gain of 20dB and receiving input
$\mathrm{P}_{-1}$
of −22 dBm. The transmission output saturation power is 14dBm, the carrier rejection is 30dBc, and the size is 5mm×4mm×0.3mm (excluding BGA).