PCSA-TMRAM: Precharge Sense Amplifier-Based Ternary MRAM

Multi-valued logic is currently receiving much attention and has gained great importance. This paper discusses a novel approach to designing energy-efficient memory systems with high storage capacity using advanced multi-level logic. Due to increased power usage in existing ternary memory systems, the paper introduces a new ternary MRAM design. This design combines the energy-saving benefits of PCSA-based memory with the durable data retention of magnetic tunnel junctions, enhancing its application to ternary data processing. Using the 7nm FinFET technology for crafting digital circuits, the design significantly reduces energy consumption during reading and writing operations by up to 84% and 8%, respectively, compared to current ternary nonvolatile memories.